Abstract
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of hydrostatic pressure. At room temperature, the Hall signal changes sign as a function of pressure and vanishes completely at $p=1.53$ GPa. Even though the Hall conductivity changes sign upon increasing pressure, the room-temperature saturation value of 23 ${\rm \Omega^{-1}cm^{-1}}$ at 2.85 GPa is remarkably high and comparable to the saturation value at ambient pressure of about 40 ${\rm \Omega^{-1}cm^{-1}}$. The change in the Hall conductivity can be directly linked to a gradual change of the size of the in-plane components of the Mn moments in the non-collinear triangular magnetic structure. Our findings, therefore, provide a route for tuning of the AHE in the chiral antiferromagnetic Mn$_3$Ge.
Highlights
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn3Ge
Antiferromagnetic materials came into focus due to many new phenomena, such as the large anomalous Hall effect (AHE), spin Hall magnetoresistance, skyrmions, and the spin Seebeck effect, enriching the microcosmic physics system and encouraging vigorous development of the new field of antiferromagnetic spintronics [7,8,9,10,11]
Theoretical predictions demonstrate that this noncollinear triangular antiferromagnetic structure, common to all Mn3X (X = Ge, Sn, Ga, Ir, Rh, and Pt) compounds, gives origin to a nonvanishing Berry curvature which was predicted to lead to a large AHE [15,22,23,24,25,26,27]
Summary
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn3Ge.
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