Abstract
The stress behaviour of a type-IIA diamond in a commercial diamond-anvil cell has been examined by measuring the position of the T 2g phonon mode of the top diamond in the cell (originally located at ∼ 1332 cm −1) during a pressure-tuning FT-Raman microspectroscopic study at various pressures throughout the 0.001–62.2 kbar range. In general, the components of the scattered Raman signal from different depths appear as discrete band envelopes rather than a continuous gradient throughout the depth of the diamond. The changes taking place in the band structure with the variation in depth indicate the occurrence not of phase changes but of discontinuities in the pressure gradient throughout the diamond. For measurements made at the bottom edge of the diamond (i.e. at the sample-diamond interface), there is a linear relationship between the position (ν, wavenumbers) of the T 2g phonon mode and the pressure ( P, kbar) such that dν dP = 0.16 cm −1 kbar −1 .
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