Abstract
The synthesis of Se85-xTe15Gax (x=0,2,6,10,15) nanocrystalline material and its resistance change under pressure is reported in this paper. The Se85-xTe15Gax (x=0, 2, 6, 10, 15) nanocrystalline material has been synthesized through melt and quench technique. Resistance change was studied under pressure (0-10 GPa) in Bridgman opposed anvil cell. The variations in resistance at different pressures were recorded. The relative resistance change is very small in the experimental range. This has given its application as a strong contender for fabricating solid state devices in Pressure Tolerant Electronics.
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