Pressure/temperature-assisted crystallographic engineering–A strategy for developing the infrared phosphors

Abstract

Light-emitting diodes utilizing the near-infrared (NIR), harnessed through the doping of Cr ion with structural engineering to tune the luminescent properties, provide a compelling avenue for cutting-edge high-tech industries. Overcoming the challenge of altering the local coordination surrounding the activators is crucial for advancing novel NIR phosphors. Here, we propose a pressure-assisted crystallographic engineering strategy to design the new Cr-doped phosphors. Implementing this approach at high temperature and pressure facilitates the phase transition from β-LiGaO2:Cr to α-LiGaO2:Cr, enabling the LiGaO2:Cr material to emit the NIR light, which was initially unattainable. Additionally, we demonstrate the in-situ monitoring of the reverse phase transition from α-LiGaO2:Cr to β-LiGaO2:Cr, validated by in-situ temperature-dependent high-resolution synchrotron X-ray diffraction. Furthermore, α-LiGaO2:Cr and β-LiGaO2:Cr exhibit unexpected optical properties characterized through synchrotron X-ray absorption, photoluminescence, temperature-dependent, and pressure-dependent analyses. Moreover, the α-LiGaO2:Cr shows strong mechanoluminescence and persistent luminescence. This research paves the way for developing novel NIR phosphors and sheds light on the analyses of pressure-assisted research.