Pressure study of proximity effect induced scaling magnetoresistance in GaAs

Abstract

A proximity effect induced scaling magnetoresistance observed in n-GaAs, n∼1019 cm−3, has been studied versus hydrostatic pressure, P, to 7 kbars. The scaling magnetoresistance is shown to be a homogeneous function of the magnetic field, B, and the pressure-dependent reduced temperature, τ(P)=[Tc(P)−T]/Tc(P), as ΔR/R‖s (T,B,P)=A0[τ(P)] f{B/[τ(P)]}, where Tc(P)=3.5 K−(0.06 K/kbar) P, and A0 is pressure independent. These results suggest that the pressure induced occupation of DX centers does not suppress the proximity effect in GaAs.