Abstract
AbstractPressure‐related effects in silicon‐on‐insulator‐like structures fabricated in either nitrogen or oxygen implanted silicon during subsequent annealing are analyzed. Among them are the removal of radiation defects from the top silicon layer, some degradation of the buried insulator, pressure dependence of charges at the Si/SiO2 (or Si/SiNx ) interface, formation of the electrically active centers in the top silicon layer and the substrate. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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