Abstract

AbstractWe have investigated the influence of the pressure ratio (PAs4/PGa) on the structural and electrical properties of GaAs layers grown at 250°C by MBE. SEM photographs have revealed smooth surfaces for PAs4/PGa≥15 and Double crystal X-ray rocking curves have shown an increase on the lattice mismatch δaI/a of the L.T. grown layers and high crystalline quality. Resistivity has not been affected by the different values of PAs4/PGa. n-GaAs epilayers grown on top of L.T. buffer layers have their mobility decreased and the electron trap density increased as revealed by Hall and DLTS measurements.

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