Abstract
The I–V characteristics of a GaAs GaAlAs based heterostructure have been investigated under hydrostatic pressure up to 14 Kbars and varying temperature between 300K and 108K. In the high temperature range, thermionic emission is the dominant current mechanism while, at low temperature, tunneling becomes more important. At low applied pressures, the results are well explained considering a Γ−Γ configuration and the effect of the pressure on the barrier height. For pressures above 8 Kbars, we observe a clear change in the transmission of electrons due to the change to a Γ-X configuration.
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