Abstract
We report a high-pressure structural sequence with a degree of reversibility for the functionally graded thermoelectric, narrow band-gap semiconductor $\mathrm{Ag}\mathrm{Sb}{\mathrm{Te}}_{2}$, discovered using angle dispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation at room temperature. The compound undergoes a $B1$ to $B2$ transition between 17 and $26\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ and proceeds through an intermediate amorphous phase that can be quenched to ambient conditions. The pressure induced structural transition observed in this compound belongs in this ternary cubic family. Density functional theory calculations performed for the $B1$ and $B2$ phases are in good agreement with the experimental results.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
