Pressure induced optical absorption and refractive index changes of a shallow hydrogenic impurity in a quantum wire

Abstract

Pressure induced binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is investigated. Calculations are performed using Bessel functions as an orthonormal basis within a single band effective mass approximation using variational method. Photoionization cross-section of the hydrogenic impurity in the influence of pressure is studied. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of pressure are analyzed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and pressure. The occurred blue shift of the resonant peak due to the pressure gives the information about the variation of two energy levels in the quantum well wire. The optical absorption coefficients and the refractive index changes are strongly dependent on the incident optical intensity and the pressure.