Abstract
The I–V characteristics of a GaAs GaAlAs based heterostructure have been investigated under hydrostatic pressure up to 14 Kbars and varying temperature between 300K and 108K. In the high temperature range, thermionic emission is the dominant current mechanism while, at low temperature, tunneling becomes more important. At low applied pressures, the results are well explained considering a Γ−Γ configuration and the effect of the pressure on the barrier height. For pressures above 8 Kbars, we observe a clear change in the transmission of electrons due to the change to a Γ-X configuration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
