Abstract
AbstractWe have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped Ge(100) and Si(100) into their respective self-implanted amorphous phases. We found that pressure enhances the growth process in both Si and Ge, with activation volumes equal to -3.3 ± 0.3 cm3/mole for Si and -6.3 ± 0.60 cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms, proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull dangling bond mechanism shows it to be a highly plausible model for the growth process.
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Materials Research Society Symposia Proceedings 205: 33-38
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