Abstract
An original polishing mechanism with a triple layer pad was developed as a surface conformable polishing mechanism in CMP (Chemical Mechanical Planarization). According to the polishing mechanism, removal profile can be controlled by base plate curvature through an assist pad made of elastic material. A pad system supported by an envelope plane composed of five wafers contributes to make a wafer level paralleled to a pad level relatively during polishing. As the result, a static pressure distribution can be transferred precisely to a dynamic polishing profile regardless of strong shearing force by polishing. In order to verify the polishing removal controllability, an original pressure distribution analysis was developed by an actual pressure distribution measurement around an entire pad surface. The analyzed pressure distribution profile was in good agreement with the actual polishing profile. From the result that the static pressure profile can be transferred to the polishing profile precisely, it was verified that the polishing mechanism is reasonable for surface conformable polishing system in CMP.
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