Abstract
Abstract The electrical resistivity of the filled skutterudite compound CeRu4Sb12 was measured in the temperature range 2– 300 K and under hydrostatic pressures up to 8 GPa . Above 6 GPa , we observed metal-semiconductor transition in CeRu4Sb12 at low temperature and a energy gap estimated from activation law was enhanced with increasing pressure at a rate of 12.2 K / GPa . Semiconductive behavior of CeRu4Sb12 under high pressure may have the same origin as other Ce-based skutterudite compounds which show semiconducting behavior.
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