Abstract
AbstractDonor ionization energies in a GaAs quantum well of the GaAs/Ga1−xAlxAs superlattice are obtained for different hydrostatic pressures up to 40 × 108 Pa. It is found that the ionization energy increases with pressure. While the conduction band nonparabolicity increases, the ionization energy generally decreases (the maximum change by 18% occurring at zero pressure), for high pressures this effect is negligible. The effect of replacing the static dielectric constant by a suitable screening function has the effect of enhancing the ionization energy by about 2%, the maximum contribution arising at high pressures.
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