Abstract
AbstractPhotoluminescence experiments on 6H‐SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H‐Sic deduced from the P0 line turns out to be +2.0 meV/GPa. Nonrelativistic band structure calculations within the density‐functional theory based on the local density approximation are used to calculate the pressure coefficients of the indirect band gaps of the 6H, 4H, and 3C SiC polytypes. The comparison with available experimental data shows good agreement with the theoretical results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
