Abstract
The static dielectric constant ϵ of InSb was directly determined from typical capacitance measurements. To carry out these experiments the high resistant n-type InSb material was used. The extremely low carrier concentrations ( n < 10 12 cm −3) were obtained by pressure induced freeze-out of electrons on metastable donor states. The pressure variation of dielectric constant was studied at 77 K in the pressure range up to 15 kbar. The ϵ( P) variation was compared with the theoretical estimation.
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