Abstract
We report the measurement of the pressure dependence for the band-gap energy E g and conduction-band mass m c for an 80 Å-wide n-type In 0.20Ga 0.80As/GaAs strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-gap energy E g, at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-gap energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, −2×10 −2 meV/ kbar 2 , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative ∂log(m c )/ ∂P=0.58% kbar −1 .
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