Abstract
The pressure dependence of the Sb level is achieved by using the double-band anticrossing model to fit the experimental pressure dependence of the band gap energy of dilute nitride and antimony GaNxSbyAs1−x−y alloy. It is found that the pressure coefficient for the Sb level is much larger than that for the N level. The difference of the pressure dependence between the Sb level and the N level is due to two factors. One is the different locations of the Sb level and the N level. The other is that the atomic size mismatch and electronegativity difference between As and Sb atoms are much smaller than those between N and As atoms. In addition, it is found that the N-Γ conduction band's minimum coupling interaction is the major factor to affect the pressure dependence of the band gap energy of GaNxSbyAs1−x−y.
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