Abstract
The pressure dependence of the Raman spectra of phase-pure InSe thin films prepared by the low-pressure metal-organic chemical vapor deposition technique has been studied using a diamond-anvil high-pressure cell. Enhancement in the intensities of the Raman modes has been observed as a result of pressure-induced ``tuning'' of the energy of the ${M}_{1}$-type hyperbolic exciton in InSe at $\ensuremath{\sim}2.54\mathrm{eV}$ through discrete incident laser photon energies. The pressure coefficients of the phonon modes and of the hyperbolic exciton in InSe have been determined.
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