Abstract
We have introduced a scaling procedure of the pressure dependence of magnetization in diluted magnetic semiconductors (DMS) based on quite general considerations. This provides the direct relation between the magnetization at certain value of magnetic field, temperature and pressure with that at zero pressure but for lower magnetic field and temperature. It is also shown that this scaling procedure should be applicable to various DMS at zero pressure, as illustrated by appropriate experimental data for Cd 1− x Mn x Te and Zn 1− x Mn x Te.
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