PRESSURE DEPENDENCE OF ELECTRON–IO-PHONON INTERACTION IN MULTI-INTERFACE HETEROSTRUCTURE SYSTEMS

Abstract

The interface-optical (IO) phonon modes and their interaction with electrons in a multi-heterointerfaces structure are studied by using a transfer matrix method within the framework of the dielectric continuum model. The dispersion equation of IO phonon modes and the electron–IO-phonon (e– IO -p) interaction Hamiltonian are derived by considering the pressure effect. This method facilitates systematic calculations for complex structures where the conventional method is very difficult to implement. The numerical computation has been performed for a quantum well GaN/AlN system under pressure. The e– IO -p coupling related to the IO modes with the AlN LO-frequency (phonon energy 112.46 meV) at the long-wavelength limit is strongest in the four branches of IO-phonon modes. The result indicates that the IO-phonon modes and e– IO -p interaction coupling functions increase with pressure obviously.