Abstract
The adoption of new thin-film materials in high-end technologies, such as monolithic tandem solar cells and integrated circuits, demands fabrication processes that allow a high level of control over film properties such as thickness, conformality, composition, and crystal structure. Achieving this with traditional optoelectronic materials, such as silicon, indium phosphide, gallium arsenide, silicon nitride, and several metal oxides, has opened the way for applications such as high-efficiency photovoltaics, light emitting devices, and integrated photonics. More recently, halide perovskites have demonstrated huge potential in optoelectronic applications, showing exceptional photovoltaic properties, light emission, and lasing performance. Common growth techniques for these halide perovskites have been solution-based methods. Optimized solution-based processes yield high quality thin films well-suited for applications, such as single-junction solar cells, but remain incompatible with integration into complex devices such as monolithic tandem photovoltaics and photonic circuits. Therefore, new fabrication methods allowing atomic, structural, and compositional precision with the conformal growth of hybrid and multi-compound halide perovskite thin films are of utmost importance for material exploration and for their application in complex devices. This Perspective reviews the progress on synthesis methods of halide perovskite thin films, discusses pressing challenges, and proposes strategies for growth control, versatile film deposition, monolithic device integration, epitaxial growth, and high-throughput synthesis to discover novel and non-toxic stable metal halide compositions.
Highlights
The rapid application and evolution of halide perovskites in different optoelectronic disciplines have enabled constant progress in compositional engineering and in the development of methods to synthesize halide perovskite thin films
Scitation.org/journal/apm while not widely reported, hybrid or sequential methods may be interesting for the study of other mixed anion compounds such as chalco-halide absorbers for which the incorporation of the two distinct anions could be done independently in two steps
Regardless of all available methods, several challenges remain for the controlled thin-film formation of halide perovskites to fully explore their exceptional optoelectronic properties
Summary
The rapid application and evolution of halide perovskites in different optoelectronic disciplines have enabled constant progress in compositional engineering and in the development of methods to synthesize halide perovskite thin films. Halide perovskites were first synthesized in an aqueous solution at the end of the 19th century This included a variety of compositions such as CsPbBr3, CsPbI3, and CsPbCl3.1 it was not until the late 1990s that the scientific community discovered the useful properties of the halide perovskite family in electroluminescence (EL) and light-emitting devices (LED).[2] In. 1994, the spin coating method was first conceived to deposit hybrid (C6H5C2H4NH3)2PbI4 layered perovskites in EL devices.[3] In 1997, thermal co-evaporation was devised to sublimate lead iodide (PbI2) and methylammonium iodide (MAI) from separate sources onto a substrate to obtain layered (RNH3)2PbI4 perovskite, as well as cubicphase methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) films.[4]. With the current drive on perovskite tandem technologies for industry scalability, the development of deposition methods for a full breadth of halide perovskite compositions is becoming a top priority
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
