Preserving thin layer of GO for direct growth of VG using a low-etch shielded PECVD

Abstract

The growth of vertical graphene (VG) on thin graphene oxide (GO) may provide a semi-insulating VG-GO. Unfortunately, the highly energetic plasma will etch out the GO template layer. In this communication, we report the use of a meshed shield to lower the physical etching on the substrate during plasma-enhanced chemical vapor deposition (PECVD). The medium-temperature of 600 °C and high-power of 300 WRF managed to grow higt h-quality VG on GO during the shielded PECVD process. GO was only slightly reduced after the process. The synthesized VG-GO film is effective as a lateral heat spreader. The heating of the peripheral heat sink was increased from 1.35 to 8.14 KW−1 with the presence of a VG-GO film. The reduction in lateral thermal resistance was better than GO and VG alone.