Abstract
AbstractThis paper describes the present and future status of silicon crystal technology for high‐performance silicon VLSI. For 4 M to 16 M memory IC's, conventional technology must be developed further and the crystalline quality by gettering and wafer shape must be improved. The development of BiCMOS technology depends strongly on the improvement of epitaxial growth technology. A reduction in the device size causes problems in reliability and in the physical limit of the device performance.To overcome these problems, research and development of new crystal growth technologies are in demand. Among these technologies, the SOI (silicon on insulator) technology, selective epitaxial growth and molecular beam epitaxy will be the key technologies for high‐performance VLSI with ultrahigh speed, very large‐scale and ultramultifunctions.
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