Abstract
One of the most striking features of the high-temperature superconducting cuprates is the presence of a gap-like structure in the density of states above the superconductive transition temperature, T c. Analysis of conductance data from point-contact tunneling measurements on disordered W/Si thin films shows the presence of similar gap-like features above T c. Details of the film growth and characterization are presented. A phase diagram which includes T c and a pseudo-gap temperature, T *, are presented.
Published Version
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