PREPARING OF THE CHAMELEON COATING BY THE ION JET DEPOSITION METHOD

Jakub Skocdopole,Martin Golan,Antonin Schenk,Giacomo Baldi,Lucrezia Aversa,Irena Kratochvilova,Petr Nozar,Ladislav Kalvoda

doi:10.14311/app.2017.9.0019

Abstract

Preparation of chameleon coatings using an Ionized Jet Deposition (IJD) technique is reported in the present paper. IJD is a new flexible method for thin film deposition developed by Noivion, Srl. The chameleon coatings are thin films characterised by a distinct change of their tribological properties according to the external conditions. The deposited films of SiC and TiN materials were examined by the Raman spectroscopy, SEM and XPS. The results of the Raman spectroscopy have proved an amorphous structure of SiC films. The data from XPS on TiN films have shown that the films are heavily oxidized, but also prove that the films are composed of TiN and pure Ti. The SEM provided information about the size of grains and particles constituting the deposited films, which is important for tribological properties of the films. Deposition of the chameleon coating is very complex problem and IJD could be ideal method for preparation of this coating.

Highlights

Chameleon coating is a multilayer film, which changes its tribological attributes according to the external conditions
Ionized Jet deposition is one of PVD (Physical Vapor Deposition) methods for preparation and growth of thin films. It is based on generation and application of dense pulsed electron beam which interacts with selected target material and produces a plume of the target material
In this article we will focus on a part of the chameleon coatings, namely, hard metal carbides and nitrides. Such deposited hard films are examined by Raman spectroscopy, SEM and XPS and the results reported and discussed

Summary

Introduction

Chameleon coating is a multilayer film, which changes its tribological attributes according to the external conditions. Ionized Jet deposition is one of PVD (Physical Vapor Deposition) methods for preparation and growth of thin films. It is based on generation and application of dense pulsed electron beam which interacts with selected target material and produces a plume of the target material. The independent parameters are distance between target and substrate, working gas, pressure during deposition, frequency of electron beam pulses and trigger voltage. All these parameters can be adjusted according to the desired deposition process outcome. In order to deposit strongly isolating materials, it is necessary to add an auxiliary anode between IJD hollow cathode and target of the deposited material to electrically decouple the IJD system from the target

Results

Discussion

Conclusion