Abstract
Nanoparticles of Pb1-xCdxS within the composition of 0≤x≤1 were prepared from the reaction of aqueous solution of cadmium acetate, lead acetate, thiourea, and NaOH by chemical co-precipitation. The prepared samples were characterized by UV-Vis spectroscopy(in the range 300-1100nm) to study the optical properties, AFM and SEM to check the surface morphology(Roughness average and shape) and the particle size. XRD technique was used to determine the crystalline structure, XRD technique was used to determine the purity of the phase and the crystalline structure, The crystalline size average of the nanoparticles have been found to be 20.7, 15.48, 11.9, 11.8, and 13.65 nm for PbS, Pb0.75Cd0.25S, Pb0.5Cd0.5S, Pb0.25Cd0.75S, and CdS respectively. The results indicate that crystalline structure of all prepared samples is cubic except CdS which shows hexagonal and cubic structure. The particle size was found within the range of (64.81 to 91.14) nm, with a high purity.
Highlights
Processing by means of chemical coprecipitation of bi- and ternary semiconducting matter in different sizes and formats is one of the fastest areas of material growth research because this method of deposit is simple, cost-effective and produces high quality that is important for applications in different optical and electrical devices(1-3)
As a result, when Cd2+occupies more and more of the space originally occupied by Pb2+, the internal strain increases and the crystal structure of the PbCdS solid becomes unstable
The XRD analysis shows that PbS has a cubic structure while Cadmium sulfide (CdS) has cubic and hexagonal structure and reveals that they are free from impurities
Summary
Processing by means of chemical coprecipitation of bi- and ternary semiconducting matter in different sizes and formats is one of the fastest areas of material growth research because this method of deposit is simple, cost-effective and produces high quality that is important for applications in different optical and electrical devices(1-3). Cadmium sulfide (CdS) and lead sulphide (PbS) are examples of semiconductor material which have received great attention and can be deposited by the method of precipitation. Both semiconductors, which have originated in the specific photovoltaic and luminescent applications, are good respondents to the visible spectrum light (4). PbS with a small direct band gap of 0.41eV at 300 K (at room temperature) is one of the materials commonly studied as a result of their possible application on non-lineal optical devices by group IV-VI semiconstructors(6), it is used in many other areas such Pb+2 ion detectors, photographs and absorbers (7). PbS appears to have strong effects below the exitonic Bohr radius of 18 nm on the quantum scale and can be changed from 0.41ev (bulk) to 4.00ev (8)
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