Abstract
Metal-doped semiconductors have attracted a lot of attention due to their favorable properties that can be used in the optical devices field. In this paper, Al-CdTe (ACE) films were prepared by dual-target co-sputtering. By controlling the sputtering power of the DC target to change the content of the Al dopant, it was found that the morphology of the films was slightly changed, the band gap became larger, and the crystalline quality became better. The nonlinear coefficients were measured at 800 nm using the femtosecond (fs) Z-scan technique, and the results were that the nonlinear optical (NLO) properties of the samples were controlled by Al content, and there was a significant enhancement of the nonlinear coefficients of the ACE films. The results of this study show that ACE films have a promising application in both optoelectronic devices and photodetectors.
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