Abstract
Abstract: Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 applications in devices are also discussed. Finally, a conclusion will be offered and future research perspectives on this key semiconducting material.
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