Abstract
ZnSe/ZnTe heterostructures were prepared by solid-state substitution reaction in an open-tube furnace. ZnTe substrates were reacted with Se vapor under H2 flow and the substrate surfaces were converted to ZnSe films by the substitution of Te atoms with Se atoms. The film thickness was examined as a function of temperature and the diffusion coefficients with the frequency factor of D0 = 2.3 × 10−4cm2/s and the activation energy of Ea = 1.47eV were obtained. ZnSe films were found to be n-type with high resistivity.
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