Preparation of ZnO Films by Low-pressure Organometallic Chemical Vapor Deposition

Abstract

Abstract Using zinc acetate as a precursor, ZnO films have been prepared on sapphire () substrates at pressures of 2.7 × 10−2 and 6.7 × 10−3 Pa. The deposition rate increased with substrate temperature. The crystal structure of ZnO film was dependent on the substrate temperature and H2O partial pressure. In particular, oriented () ZnO films have been formed at 350 °C at 2.7 × 10−2 Pa.