Abstract
Cu(In,Ga)Se2 (CIGS) surface was modified with Zn doping using vacuum evaporation. Substrate temperatures andexposure times d the Zn evaporation were changedto control a distribution of Zn in the CIGS films. Diffusion of Zn in the CIGS films was observed at the substrate temperature of over 2001C. The diffusion depth of Zn increases with increasing the exposure time at the substrate temperature of 3001C. Solar cells were fabricated using the Zn doped CIGS films. A distribution of the efficiencies decreases with increasing the exposure time of Zn vapor. The doping of Zn at the film surface improved reproducibility of a high fill factor andefficiency. A solar cell fabricatedusing the CIGS film mod ifiedwith Zn doping showed an efficiency of 14.8%. r 2002 Elsevier Science B.V. All rights reserved.
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