Abstract
Tungsten silicide (WSi i ) films were prepared by rapid thermal annealing (RTA) of W films obtained by chemical vapor deposition (CVD) from carbonyl precursor—W(CO) 6. The RTA process proceeds at 800–1400°C in different gas environments—argon, nitrogen, vacuum, etc. Investigations of the crystal phase structure were performed by Reflection High Energy Electron Diffraction (RHEED) method. Difference in the phase composition was observed for thin and thick WSi 2. Close to the surface of W films, a pure metal rich phase is formed, and at the interface W\\Si, a phase rich of Si is found. Diffusion was considered to be the controlling process in the kinetics formation of WSi 2. The influence of the gas environment on WSi 2 was also studied. The comparison made shows that nitrogen favours WSi 2 formation. Some of the samples have shown a certain degree of texturing.
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