Abstract
Single crystal boules of lead-tin telluride (Pb 0.8Sn 0.2Te) 19 mm in dia and up to 25 mm long have been grown by a closed-tube seeded vapor transport method. The crystals were grown in furnaces equipped with isothermal ‘heat pipes’ which provide convenient control of the temperature profile during growth. Growth rates of 2–2.5 g/day were employed. Scanning X-ray topography analysis revealed good crystallinity. Wafers cut from the crystals were annealed to a carrier concentration 1–2 × 10 17 cm −3 and mobilities of 2–3 × 10 4 cm 2/V-sec ( p-type, 77°K). Photodiodes formed from this material had peak detectivities of 2 × 10 10 cmHz 1 2 W −1.
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