Abstract
Boron-nitride films were prepared on single-crystal silicon substrates by electron-cyclotron-resonance (ECR) plasma-assisted, chemical vapour deposition (CVD), using B2H6 and nitrogen as the source gases, without intentional heating of the substrate. Turbostratic boron-nitride (t-BN) films were obtained at a maximum deposition rate of 1.8 nms−1. A cubic boron nitride (c-BN) phase formed in the t-BN films after application of a radio-frequency (r.f.) bias to the substrates at a voltage of 156–172 V and at a maximum deposition rate of 0.08 nms−1.
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