Preparation of tungsten disilicide thin films by laser evaporation

Abstract

Abstract In this work it is shown that cast targets of pure tungsten disilicide can be prepared by means of a set of vacuum metallurgical techniques. The conditions of laser evaporation of such targets to ensure deposition of the tungsten disilicide films with the specific electrical resisitivity of 50μΩ cm have been studied. Grazing-beam incidence X-ray diffractometry and Rutherford backscattering of helium ions were used to demonstrate that a tetragonal tungsten disilicide phase was the dominating phase in the films.