Abstract
Titanium films were deposited in a vacuum on thermally oxidized silicon. When the titanium/silicon-oxide/silicon structures were heated in oxygen to temperatures of 800–1000°C, titanium oxide films grew on the silicon substrates by a solid-state reaction that involved titanium atoms substituting silicon atoms in silicon oxide. The thickness of the titanium oxide films increased proportionally to that of deposited titanium films. The dielectric constant, resistivity, and breakdown field strength were significantly influenced by treating temperature. The 1000°C-prepared TiO2 films had the dielectric constant of (15–25) εo, the resistivity of 1010 Ω cm, and the breakdown field strength around 106 V/cm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
