Abstract
Titanium oxide films were prepared on a Si(100) surface by means of a hot wall technique using titanium iso-propoxide as a source material. It was found that the films could be deposited onto a Si(100) substrate in the temperature range 30–150°C. The growth rate was between 0.03–0.045 Å s −1 depending on the substrate temperature. Although the as-deposited film prepared at a substrate temperature of 150°C has a stoichiometry close to TiO 2, it was implied from the XPS spectra that the film is an oxide precursor. Polycrystalline oxide films with anatase were obtained after annealing the as-deposited films at 500°C in air. Capacitance vs. voltage characteristics of the films are also discussed.
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