Abstract
The in-situ electron microscope technique has been shown to be a powerful method for understanding the nucleation and growth of thin films formed both by vacuum vapor deposition and ion beam sputter-deposition. Single crystal silicon which has only been chosen as substrate for thin film deposition outside the electron microscope has now been prepared in a form suitable for in-situ deposition.The method of the preparation of thin silicon substrate is a combination of jet chemical etching and modified ion beam thinning. A specimen of thickness roughly 0.010 inch is first etched from both sides by the jet etching technique. After jet etching, it is transferred to the Commonwealth Scientific ion micro-milling instrument and bombarded from both sides with Argon ion beam. A pin hole occurs in the center of the specimen after about 30 minutes of ion bombardment.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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