Abstract
The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitride deposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometry have been applied forin situidentification of deposition precursors in the plume moving from the target. Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanning electron microscopy, have been used to characterise thin films deposited by these methods.
Highlights
Research on thin-film deposition of AlN, GaN, and InN has been the subject of numerous review articles
Thin films of AlN, GaN, and InN have been grown by various methods which include metalorganic chemical vapor deposition (CVD) [19,20,21,22,23], microwave CVD [24], Band-gap energy
This review reports the growth of Al, Ga, and In nitride thin films by pulsed-laser ablation deposition either by direct ablation of nitride targets or by a reactive process by pulsed laser ablation and deposition of a metal target in the presence of gaseous ammonia
Summary
Research on thin-film deposition of AlN, GaN, and InN has been the subject of numerous review articles. Various authors [14,15,16,17,18] reported what is a very important step in the production of group III nitrides It was based on the realization of current-injected laser diodes derived from a heterostructure composed of (In, Ga)N/GaN/(Al, Ga)N. The relationship between bond length and band-gap energy as shown in Figure 1 serves as a basic consideration for device fabrication Thin films of AlN, GaN, and InN have been grown by various methods which include metalorganic chemical vapor deposition (CVD) [19,20,21,22,23], microwave CVD [24], Band-gap energy (eV). The results of the film characterisation were obtained by conventional techniques such as X-ray diffraction (XRD), Rutterford Backscattering Spectroscopy (RBS), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and energy dispersive X-ray analysis (EDX)
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