Abstract
The preparation of non-stoichiometric TiO x films by reactive sputtering of titanium in an argon-oxygen plasma was studied in an r.f. diode sputtering system at 2 keV bias voltage. The properties of titanium oxide films deposited from oxidized and non-oxidized Ti targets were explored to determine the composition of the deposited phases. The mole fraction x of oxygen in the deposited films was determined from a combined analysis of deposition rate, substrate density and UV and IR spectra. The results indicate that phases with x = 0, x = 1.0 and x>1.6 (the Magneli phases and TiO 2) can be readily produced during reactive sputtering in argon plasmas containing an oxygen mole fraction in the range 0-0.15. The deposition of suboxide phases other than α-TiO δ, TiO 1±δ required stringent control of the processing variables.
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