Preparation of Solar Grade Silicon Precursor by Silicon Dioxide Electrolysis in Molten Salts

Abstract

Al-Si alloy, a precursor of solar grade silicon, was prepared by direct electrolysis in cryolite molten salt at 950 °C using high purity silica as material, liquid aluminum as the cathode and high purity graphite as the anode. The electrochemical behavior of Si(IV) ion was investigated using cyclic voltammetry method. The electrolysis products were characterized by XRD, SEM/EDS and ICP. The results indicate that the reduction process of Si(IV) on tungsten electrode is a two-step process and there is about 0.6 V gap between the two steps. The contents of boron and phosphorus in the aluminum-silicon alloy are 3 ppmw and 8 ppmw, which will make the directional solidification purification effectively and reduce the cost of preparation solar grade silicon from metallurgical grade silicon.