Abstract

Single crystal SnO2 nanowires with diameters of 20 ~ 100nm have fabricated by the reaction of vapor SnO with the oxygen. Vapor-Solid (VS) mechanism is applied to explain to the growth process. Scan electron microscopy (SEM), Transmission electron microscopy (TEM), Selected area diffraction (SAED) and High resolution transmission electron microscopy (HRTEM) studies show that the SnO2 nanowires grow along [100] or [010] orientation, which is not in agreement with the symmetry of SnO2 crystal structure. We prove that the low vapor saturation is the key growth condition of the SnO2 nanowires which prevents the two dimensional nucleation on the side faces and causes one dimensional large aspect ratio.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call