Abstract
We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the (002) direction. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn2S3 nanowires is governed by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.
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