Abstract
Sm <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Co <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">100-x</inf> ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20 \leq x \leq 30</tex> ) films deposited on glass substrate and Sm <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">37.8</inf> Co <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">62.2</inf> films deposited on silicon substrate with perpendicular magnetization have been prepared by a magnetron rf sputtering. The influence of sputtering conditions, i.e. bias voltage; substrate temperature; composition and perpendicular magnetic field on perpendicular anisotropy are reported in detail.
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