Abstract

Silicon monoxide (SiOx, 0 < x < 2) has been limited in commercial applications due to its low electrical conductivity and large volume expansion effect. The existing method is to use liquid phase method for carbon coating treatment, but some problems such as uneven coating are still exist. Therefore, in this paper, C2H2 is used as carbon source to coat SiOx material in a rotating chemical vapor deposition furnace to obtain hard carbon coated SiOx (SiOx@C) material. At the rate of 0.5C (1C = 2.1 A g−1), the discharge specific capacity of SiOx@C remained at 1116.8 mAh g−1 after 140 cycles, which is 539.8 mAh g−1 higher than SiOx.

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