Abstract
In this study, facing target sputtering(FTS) apparatus was fabricated and its process characteristics were investigated to estimate possibility to thin film passivation for optoelectronics. We report that the FTS system can prepare a high quality silicon oxide(SiOx) and silicon oxynitride(SiOxNy) films with a dense micro structure and an excellent uniformity less than 5%. In addition, the low temperature deposition is possible because the bombardment of high energy particles can be restrained. Thus, we suggest that the FTS is one of the suitable deposition techniques for the thin film passivtion layer and the gas barrier layer for optoelectronics.
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