Abstract

Single- and few-layer graphene sheets were fabricated by selective chemical reactions between Co film and SiC substrate. A rapid cooling process was employed. The number of layers and crystallinity of graphene sheets were controlled by process parameters. The formation mechanism of graphene was highly sensitive to carbon diffusion. Free carbon precipitated and then moved across the product layer that was composed mainly of cobalt-silicides. The graphene layer formed homogeneously on the surface and then transferred to the other substrate. This could provide a method for high-quality fabrication of wafer-sized graphene sheets.

Highlights

  • A highly crystalline material, graphene is represented as a two-dimensional (2D) building block of carbon allotropes with honeycomb lattice [1]

  • Graphene sheets are prepared by different methods such as mechanical cleavage of graphite using adhesive tapes [2], chemical reduction of graphite oxide [5, 6], epitaxial growth (EG) of graphene by thermal graphitization of SiC [7], chemical vapor deposition (CVD) of hydrocarbon gases on transition metals [8], exfoliation of graphite by sonication [9], quenching [10], and wet ball milling [11]

  • This paper presents a route for graphene preparation by using SiC substrate reaction with Co film instead of Ni

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Summary

Introduction

A highly crystalline material, graphene is represented as a two-dimensional (2D) building block of carbon allotropes with honeycomb lattice [1]. Graphene sheets are prepared by different methods such as mechanical cleavage of graphite using adhesive tapes [2], chemical reduction of graphite oxide [5, 6], epitaxial growth (EG) of graphene by thermal graphitization of SiC [7], chemical vapor deposition (CVD) of hydrocarbon gases on transition metals [8], exfoliation of graphite by sonication [9], quenching [10], and wet ball milling [11]. Instead of dredging up graphene layers after acid etching [12, 13], supportive coating of a poly(methyl methacrylate) (PMMA) film is used on graphene [17] in order to enhance transfer efficiency to the other substrate

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