Abstract
Preparation of SiC ultrafine particles from SiH2Cl2-C2H4 mixtures by using CO2 laser was investigated. Powders with specific surface areas of 8 to 150m2/g, were obtained by irradiating CO2 laser beam to SiH2Cl2-C2H4 gas mixture at atmospheric pressure. The power density of laser beam was 3.66kW/cm2 and wave length was 10.6μm. XRD of the products showed that Si, β-SiC and free carbon were produced and that the composition of powders depended on the C2H4/SiH2Cl2 ratio. Reaction temperature changed with the power density of laser beam and C2H4/SiH2Cl2 ratio. Hysteresis was observed between reaction temperature and power density of laser beam.
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